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oai:uvadoc.uva.es:10324/737562025-01-21T09:18:29Zcom_10324_1148com_10324_931com_10324_894col_10324_1270

Mistroni, Alberto Jia, Ruolan Dorai Swamy Reddy, Keerthi Reichmann, Felix Wenger, Christian Perez, Eduardo Castán Lanaspa, María Helena Perez-Bosch Quesada, Emilio Dueñas Carazo, Salvador 2025-01-13T18:22:26Z 2025-01-13T18:22:26Z 2024 IEEE Electron Device Letters, vol. 45, no. 12, pp. 2391-2394, Dec. 2024, 0741-3106 https://uvadoc.uva.es/handle/10324/73756 10.1109/LED.2024.3485873 2391 12 2394 IEEE Electron Device Letters 45 1558-0563 Reliable data storage technologies able to operate at cryogenic temperatures are critical to implement scalable quantum computers and develop deep-space exploration systems, among other applications. Their scarce availability is pushing towards the development of emerging memories that can perform such storage in a non-volatile fashion. Resistive Random-Access Memories (RRAM) have demonstrated their switching capabilities down to 4K. However, their operability at lower temperatures still remain as a challenge. In this work, we demonstrate for the first time the forming and resistive switching capabilities of CMOS-compatible RRAM devices at 1.4K. The HfO2-based devices are deployed following an array of 1-transistor-1-resistor (1T1R) cells. Their switching performance at 1.4K was also tested in the multilevel-cell (MLC) approach, storing up to 4 resistance levels per cell. eng info:eu-repo/semantics/openAccess 0741-3106 © 2024 IEEE. Personal use is permitted, but republication/redistribution requires IEEE permission. See https://www.ieee.org/publications/rights/index.html for more information. Forming and Resistive Switching of HfO₂-Based RRAM Devices at Cryogenic Temperature info:eu-repo/semantics/article