2026-05-05T20:01:00Zhttps://uvadoc.uva.es/oai/request

oai:uvadoc.uva.es:10324/813512026-01-20T10:38:39Zcom_10324_39910com_10324_894col_10324_39911

López Martín, Pedro Pelaz Montes, María Lourdes Marqués Cuesta, Luis Alberto Aboy Cebrián, María Santos Tejido, Iván Martín Encinar, Luis Universidad de Valladolid. Escuela Técnica Superior de Ingenieros de Telecomunicación This project aims to develop atomistic models based on physical mechanisms that are predictive and computationally efficient for simulating high-energy irradiation processes in semiconductors. In particular, irradiation with very high-energy neutrons and protons (MeV-GeV) is an inevitable process in devices operating in highly radioactive environments (radiation sensors, nuclear facilities, medical radiological equipment, etc.), causing a loss of performance and a reduction in their lifespan. We have established a multi-scale atomistic simulation methodology combining the Geant4 – BCA – kMC techniques, which allows us to obtain the spectrum of recoils produced by a given irradiation (particle type and energy), simulate their interaction with the semiconductor, and their effect on the activation of dopants. This Dataset includes the spectrum of PKAs resulting from neutron and proton irradiation in Si obtained with Geant4, the analysis of defects produced by low energy Si recoils as simulated by MD and BCA techniques, and the simulation with the kMC code DADOS of dopant deactivation (acceptor removal process) in p-type Si sensors induced by neutron an proton irradiation. 2026-01-12 2026-01-12 2026-01-12 2026 dataset https://uvadoc.uva.es/handle/10324/81351 https://doi.org/10.71569/48xr-cg45 eng The Dataset generated in this research project is based on the atomistic simulations performed during the project. Microscopic origin of the acceptor removal in neutron-irradiated Si detectors - An atomistic simulation study (https://doi.org/10.1016/j.actamat.2022.118375) Atomistic simulations of acceptor removal in p-type Si irradiated with neutrons (https://doi.org/10.1016/j.nimb.2021.12.003) info:eu-repo/semantics/openAccess http://creativecommons.org/licenses/by-nc-nd/4.0/ Attribution-NonCommercial-NoDerivatives 4.0 Internacional Attribution-NonCommercial-NoDerivatives 4.0 Internacional The data (simulations results) were generated at the Department of Electricity and Electronics, University of Valladolid, Valladolid (Spain) start 2021-09-01; end 2025-08-31