2026-04-28T21:14:40Zhttps://uvadoc.uva.es/oai/request

oai:uvadoc.uva.es:10324/825382026-03-17T09:16:27Zcom_10324_43510com_10324_954com_10324_894col_10324_43513

García García, Héctor Vinuesa, G. Val, T.del Kalam, K. González, M.B. Campabadal Segura, Francesca Dueñas Carazo, Salvador Castán Lanaspa, María Helena 2026-02-04T09:23:40Z 2026-02-04T09:23:40Z 2026 Solid-State Electronics, 2026, 231, 109294 0038-1101 https://uvadoc.uva.es/handle/10324/82538 10.1016/j.sse.2025.109294 109294 Solid-State Electronics 231 Memristors have drawn interest due to their use as artificial synapses in neuromorphic circuits. This work investigates the multilevel conductance modulation in Al2O3 and HfO2-based memristors. Specifically, the control of the depression or reset transition when applying identical consecutive voltage pulses was the main objective. Both pulse amplitude and pulse accumulated time can control the reset transition. Voltage required to reset the device is higher for Al2O3, which can lead to higher energy consumption. However, this material showed better reset transition linearity. spa info:eu-repo/semantics/embargoedAccess Elsevier Multilevel conductance modulation in HfO2, Al2O3, and HfO2/Al2O3 bilayer memristors info:eu-repo/semantics/article