2026-05-05T21:48:20Zhttps://uvadoc.uva.es/oai/request

oai:uvadoc.uva.es:10324/825402026-03-17T09:22:39Zcom_10324_43510com_10324_954com_10324_894col_10324_43513

00925njm 22002777a 4500 dc García García, Héctor author Vinuesa Sanz, Guillermo author González, Mireia B. author Campabadal Segura, Francesca author Castán Lanaspa, María Helena author Dueñas Carazo, Salvador author 2025 Memristors, also known as resistive switching devices, have great potential for applications in memory and neuromorphic systems. Understanding the switching mechanisms is crucial since ReRAM memories need to operate at high frequencies. It is known the reset transition is dominated by the conductive filament Joule heating. We have studied the reset transition in TiN/Ti/HfO2/W metal–insulator–metal memristors by applying constant power signals to different initial filament thicknesses, which were obtained using different initial low resistance states. The results show that power value controls the reset times, decreasing when the power is increased. On the other hand, larger resistances lead to faster reset transitions. These measurements have allowed us to obtain a value of the thermal resistance of the conductive filament. Moreover, we have observed the reset times as a function of the initial resistance and the power lies on a common plane, which allows us to estimate the transition time by fixing an initial resistance and a power value. Materials Science in Semiconductor Processing, 2025, 186,109037 1369-8001 https://uvadoc.uva.es/handle/10324/82540 10.1016/j.mssp.2024.109037 109037 Materials Science in Semiconductor Processing 186 Reset transition in HfO2-Based memristors using a constant power signal