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oai:uvadoc.uva.es:10324/339032025-03-26T19:10:04Zcom_10324_1148com_10324_931com_10324_894com_10324_28025com_10324_954col_10324_1272col_10324_28028

2019-01-11T07:44:36Z urn:hdl:10324/33903 Modeling SiGe through classical molecular dynamics simulations: chasing an appropriate empirical potential Martín Encinar, Luis Santos Tejido, Iván López Martín, Pedro Marqués Cuesta, Luis Alberto Aboy Cebrián, María Pelaz Montes, María Lourdes Producción Científica We used classical molecular dynamics simulations to reproduce basic properties of Si, Ge and SiGe using different empirical potentials available in the literature. The empirical potential that offered the better compromise with experimental data was used to study the surface stability of these materials. We considered the (100), (100)2×1 and (111) surfaces, and we found the processing temperature range to avoid the structural degradation of studied surfaces. 2019-01-11T07:44:36Z 2019-01-11T07:44:36Z 2019 info:eu-repo/semantics/conferenceObject 2018 Spanish Conference on Electron Devices (CDE). Proceedings, 14-16 Nov. 2018, Salamanca. 978-1-5386-5779-9 http://uvadoc.uva.es/handle/10324/33903 10.1109/CDE.2018.8597030 eng https://ieeexplore.ieee.org/document/8597030 info:eu-repo/semantics/openAccess © 2018 IEEE Institute of Electrical and Electronics Engineers (IEEE).