2024-03-29T13:43:43Zhttps://uvadoc.uva.es/oai/requestoai:uvadoc.uva.es:10324/446672021-06-24T07:23:05Zcom_10324_43510com_10324_954com_10324_894col_10324_43515
2021-01-08T13:23:27Z
urn:hdl:10324/44667
Admittance memory cycles of Ta2O5-ZrO2-based RRAM devices
Dueñas Carazo, Salvador
Castán Lanaspa, María Helena
González Ossorio, Óscar
Domínguez, Leidy Azucena
García García, Héctor
Kalam, Kristjan
Kukli, Kaupo
Ritala, Mikko
Leskelä, Markku
Producción Científica
The resistive switching behavior of Ta 2 O 5 -ZrO 2 -based metal-insulator-metal devices was studied. Asymmetrical and repetitive current-voltage loops were observed. Excellent control of admittance parameters in the intermediate states between the high and low resistance ones was achieved, demonstrating suitability to analog and neuromorphic applications. Admittance memory cycles provide relevant information about the switching mechanism, in which the existence of two different metallic species in the dielectric seems to play an important role.
2021-01-08T13:23:27Z
2021-01-08T13:23:27Z
2017
info:eu-repo/semantics/conferenceObject
2017 32nd Conference on Design of Circuits and Integrated Systems (DCIS). Barcelona: IEE Xplore, 2017, 4 p.
978-1-5386-5108-7
http://uvadoc.uva.es/handle/10324/44667
10.1109/DCIS.2017.8311627
eng
https://ieeexplore.ieee.org/document/8311627
info:eu-repo/semantics/openAccess
http://creativecommons.org/licenses/by-nc-nd/4.0/
© 2017 IEE Xplore
Attribution-NonCommercial-NoDerivatives 4.0 Internacional
IEEE Xplore