2024-03-28T13:29:55Zhttps://uvadoc.uva.es/oai/requestoai:uvadoc.uva.es:10324/319632021-06-24T07:18:31Zcom_10324_1148com_10324_931com_10324_894com_10324_28025com_10324_954col_10324_1270col_10324_28026
Santos Tejido, Iván
Pelaz Montes, María Lourdes
Marqués Cuesta, Luis Alberto
Colombo, Luciano
2018-10-02T09:30:37Z
2018-10-02T09:30:37Z
2011
Physical Review B, 2011, 83, 153201
2469-9950
http://uvadoc.uva.es/handle/10324/31963
https://doi.org/10.1103/PhysRevB.83.153201
Producción Científica
We have analyzed the atomic rearrangements underlying self-diffusion in amorphous Si during annealing using tight-binding molecular dynamics simulations. Two types of amorphous samples with different structural features were used to analyze the influence of coordination defects. We have identified several types of atomic rearrangement mechanisms, and we have obtained an effective migration energy of around 1 eV. We found similar migration energies for both types of samples, but higher diffusivities in the one with a higher initial percentage of coordination defects.
Ministerio de Economía, Industria y Competitividad (Project TEC2008-06069)
Junta de Castilla y León (programa de apoyo a proyectos de investigación - Ref. VA011A09)
HPC-EUROPA2 (Project 228398)
application/pdf
eng
American Physical Society
info:eu-repo/semantics/openAccess
http://creativecommons.org/licenses/by-nc-nd/4.0/
© 2011 American Physical Society
Attribution-NonCommercial-NoDerivatives 4.0 International
Silicio cristalino
Crystalline silicon
Elucidating the atomistic mechanisms driving self-diffusion of amorphous Si during annealing
info:eu-repo/semantics/article
https://journals.aps.org/prb/abstract/10.1103/PhysRevB.83.153201
SI