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oai:uvadoc.uva.es:10324/339032025-03-26T19:10:04Zcom_10324_1148com_10324_931com_10324_894com_10324_28025com_10324_954col_10324_1272col_10324_28028

Martín Encinar, Luis Santos Tejido, Iván López Martín, Pedro Marqués Cuesta, Luis Alberto Aboy Cebrián, María Pelaz Montes, María Lourdes 2019-01-11T07:44:36Z 2019-01-11T07:44:36Z 2019 2018 Spanish Conference on Electron Devices (CDE). Proceedings, 14-16 Nov. 2018, Salamanca. 978-1-5386-5779-9 http://uvadoc.uva.es/handle/10324/33903 10.1109/CDE.2018.8597030 Producción Científica We used classical molecular dynamics simulations to reproduce basic properties of Si, Ge and SiGe using different empirical potentials available in the literature. The empirical potential that offered the better compromise with experimental data was used to study the surface stability of these materials. We considered the (100), (100)2×1 and (111) surfaces, and we found the processing temperature range to avoid the structural degradation of studied surfaces. Ministerio de Ciencia e Innovación (Proyect TEC2017-86150-P) Junta de Castilla y León (programa de apoyo a proyectos de investigación – Ref. VA097P17 and VA119G18) application/pdf eng Institute of Electrical and Electronics Engineers (IEEE). info:eu-repo/semantics/openAccess © 2018 IEEE Simulaciones de dinámica molecular Molecular dynamics simulations Modeling SiGe through classical molecular dynamics simulations: chasing an appropriate empirical potential Spanish Conference on Electron Devices (CDE 2018) 2018 Spanish Conference on Electron Devices (CDE) info:eu-repo/semantics/conferenceObject https://ieeexplore.ieee.org/document/8597030