2026-05-13T19:35:51Zhttps://uvadoc.uva.es/oai/request

oai:uvadoc.uva.es:10324/449182021-06-24T07:23:33Zcom_10324_43510com_10324_954com_10324_894col_10324_43513

Dueñas Carazo, Salvador Castán Lanaspa, María Helena Kukli, Kaupo Mikkor, Mats Kalam, Kristjan Arroval, T. Tamm, Aile 2021-01-12T07:53:09Z 2021-01-12T07:53:09Z 2018 ECS Transactions, 2018, vol. 85, n. 8. p. 201-205 1938-6737 http://uvadoc.uva.es/handle/10324/44918 10.1149/08508.0201ecst Producción Científica A comparative study of MIM-RRAM structures with different insulator materials is presented. Admittance memory mapping was carried out at 0 V dc bias, revealing two clearly separated states, both in terms of conductance and susceptance. The memory in the ON state can be modeled by means of a two parameter (resistance and inductance) equivalent circuit. The parameter extraction provides memory maps for the resistance and the inductance as well. The transition shapes between the ON and OFF state are different for each structure due to specific physical mechanisms. Ministerio de Economía, Industria y Competitividad - Fondo Europeo de Desarrollo Regional (grant TEC2014-52152-C3-3-R) Fondo Europeo de Desarrollo Regional (project TK134) Estonian Research Agency (grants IUT2-24 and PRG4) application/pdf eng IOP Publishing info:eu-repo/semantics/openAccess http://creativecommons.org/licenses/by-nc-nd/4.0/ © 2018 IOP Publishing Attribution-NonCommercial-NoDerivatives 4.0 Internacional Memory maps Mapas de memoria Memory maps : Reading RRAM devices without power consumption info:eu-repo/semantics/article info:eu-repo/semantics/acceptedVersion https://iopscience.iop.org/article/10.1149/08508.0201ecst SI