2024-03-29T01:25:02Zhttps://uvadoc.uva.es/oai/requestoai:uvadoc.uva.es:10324/486212021-09-07T21:04:56Zcom_10324_43510com_10324_954com_10324_894col_10324_43513
González Ossorio, Óscar
Vinuesa Sanz, Guillermo
García García, Héctor
Sahelices Fernández, Benjamín
Dueñas Carazo, Salvador
Castán Lanaspa, María Helena
Pérez, Eduardo
Kalishettyhalli Mahadevaiah, Mamathamba
Wenger, Christian
2021-09-07T11:33:50Z
2021-09-07T11:33:50Z
2021
ECS Transactions, 2021, vol. 102, n. 2, p. 29-35
1938-5862
https://uvadoc.uva.es/handle/10324/48621
10.1149/10202.0029ecst
29
2
35
ECS Transactions
102
1938-6737
Producción Científica
The use of thin layers of amorphous hafnium oxide has been shown to be suitable for the manufacture of Resistive Random-Access memories (RRAM). These memories are of great interest because of their simple structure and non-volatile character. They are particularly appealing as they are good candidates for substituting flash memories. In this work, the performance of the MIM structure that takes part of a 4 kbit memory array based on 1-transistor-1-resistance (1T1R) cells was studied in terms of control of intermediate states and cycle durability. DC and small signal experiments were carried out in order to fully characterize the devices, which presented excellent multilevel capabilities and resistive-switching behavior.
Ministerio de Ciencia, Innovación y Universidades (Grant, TEC2017-84321-C4-2-R )
Fondos Feder y la Deutsche Forschungsgemeinschaft (German Research Foundation) ( with Project-ID 434 434 223- SFB1461)
The Federal Ministry of Education and Research of Germany under (grant number 16ES1002)
application/pdf
eng
Electrochemical Society
info:eu-repo/semantics/openAccess
http://creativecommons.org/licenses/by-nc-nd/4.0/
© 2021 ECS - The Electrochemical Society
Attribution-NonCommercial-NoDerivatives 4.0 Internacional
RRAM
Hafnium oxide
Óxido de hafnio
Neuromorphic Applications
Aplicaciones neuromórficas
22 Física
2210.05 Electroquímica
33 Ciencias Tecnológicas
Performance assessment of amorphous HfO2-based RRAM devices for neuromorphic applications
info:eu-repo/semantics/article
info:eu-repo/semantics/acceptedVersion
https://iopscience.iop.org/article/10.1149/10202.0029ecst
SI