2024-03-28T10:41:21Zhttps://uvadoc.uva.es/oai/requestoai:uvadoc.uva.es:10324/486332023-10-17T12:45:37Zcom_10324_43510com_10324_954com_10324_894col_10324_43513
Vinuesa Sanz, Guillermo
González Ossorio, Óscar
García García, Héctor
Sahelices Fernández, Benjamín
Castán Lanaspa, María Helena
Dueñas Carazo, Salvador
Kukli, Kaupo
Kull, M
Tarre, Aivar
Jõgiaas, Taivo
Tamm, Aile
Kasikov, Aarne
2021-09-10T10:26:49Z
2021-09-10T10:26:49Z
2021
Solid-State Electronics, 2021, vol. 183, p.108085
0038-1101
https://uvadoc.uva.es/handle/10324/48633
10.1016/j.sse.2021.108085
108085
Solid-State Electronics
183
Producción Científica
Resistive switching random access memories are being thoroughly studied as prospective non-volatile memories. In this paper, we report electrical characterization of HfO2:Al2O3based metal-insulator–metal structures devised using atomic layer deposition. Dependences of electrical behavior on HfO2:Al2O3 cycle ratio is studied. An explanation for the differences between the Resistive Switching properties of the samples is proposed, based on the distribution of HfAlOx layers of the sample. Dependence of the RS properties of the samples on their growth temperature is discussed.
Ministerio de Ciencia, Innovación y Universidades con el apoyo de fondos Feder (grant TEC2017-84321-C4-2-R)
Fondo Europeo de Desarrollo Regional "Pedidos emergentes en cuanto a cuántica y nanomateriales" (TK134)
Estonian Research Agency (PRG753)
application/pdf
eng
Elsevier
info:eu-repo/semantics/openAccess
http://creativecommons.org/licenses/by-nc-nd/4.0/
© 2021 Elsevier
Attribution-NonCommercial-NoDerivatives 4.0 Internacional
RRAM
Hafnium oxide
Aluminium oxide
Hafnium-aluminum oxide
22 Física
33 Ciencias Tecnológicas
Effective control of filament efficiency by means of spacer HfAlOx layers and growth temperature in HfO2 based ReRAM devices
info:eu-repo/semantics/article
info:eu-repo/semantics/acceptedVersion
https://www.sciencedirect.com/science/article/pii/S0038110121001301
SI