2024-03-28T10:01:55Zhttps://uvadoc.uva.es/oai/requestoai:uvadoc.uva.es:10324/313262021-06-23T10:20:34Zcom_10324_1158com_10324_931com_10324_894col_10324_1243
Navarro, A.
Martínez Sacristán, Óscar
Galiana, B.
Lombardero, I.
Ochoa, M.
García, I.
Gabás, M.
Ballesteros, Carmen
Jiménez López, Juan Ignacio
Algora, C.
2018
The effects of ex situ annealing in N ambient and in situ annealing in As ambient on GaNSbAs/GaAs structures grown by molecular beam epitaxy were investigated by low temperature cross-sectional cathodoluminescence (CL). The amount and distribution of Sb was measured by energy dispersive spectroscopy (EDS). The cross-sectional CL analysis of all samples reveals a shift of the near band edge (NBE) emission along the growth axis, presumably associated with a non-uniform incorporation of Sb during the growth process,
in agreement with the Sb distribution measured by EDS in the as-grown sample. The NBE emission in the annealed samples presents a redshift with respect to the as-grown sample. This effect might be explained by a redistribution/activation of N in the GaNSbAs lattice since the Sb distribution measured by EDS does not reveal significant changes, within the error margin, with respect to the as-grown sample. The in situ annealed in the As overpressure
sample shows the best properties for solar cells applications, i.e., a NBE peak position close to 1.0 eV and the lowest full width at half maximum of this emission.
application/pdf
http://uvadoc.uva.es/handle/10324/31326
eng
Springer
Cathodoluminescence Characterization of Dilute Nitride GaNSbAs Alloys
info:eu-repo/semantics/bookPart
TEXT
UVaDOC. Repositorio Documental de la Universidad de Valladolid
Hispana