2026-03-14T08:54:10Zhttps://uvadoc.uva.es/oai/request

oai:uvadoc.uva.es:10324/339032025-03-26T19:10:04Zcom_10324_1148com_10324_931com_10324_894com_10324_28025com_10324_954col_10324_1272col_10324_28028

Martín Encinar, Luis Santos Tejido, Iván López Martín, Pedro Marqués Cuesta, Luis Alberto Aboy Cebrián, María Pelaz Montes, María Lourdes 2019 Producción Científica We used classical molecular dynamics simulations to reproduce basic properties of Si, Ge and SiGe using different empirical potentials available in the literature. The empirical potential that offered the better compromise with experimental data was used to study the surface stability of these materials. We considered the (100), (100)2×1 and (111) surfaces, and we found the processing temperature range to avoid the structural degradation of studied surfaces. application/pdf http://uvadoc.uva.es/handle/10324/33903 eng Institute of Electrical and Electronics Engineers (IEEE). Modeling SiGe through classical molecular dynamics simulations: chasing an appropriate empirical potential info:eu-repo/semantics/conferenceObject Spanish Conference on Electron Devices (CDE 2018) TEXT UVaDOC. Repositorio Documental de la Universidad de Valladolid Hispana