2024-03-29T13:32:07Zhttps://uvadoc.uva.es/oai/requestoai:uvadoc.uva.es:10324/451722021-06-24T07:23:43Zcom_10324_43510com_10324_954com_10324_894col_10324_43513
Kukli, Kaupo
Kemell, Marianna
Heikkilä, Mikko J
Castán Lanaspa, María Helena
Dueñas Carazo, Salvador
Mizohata, Kenichiro
Ritala, Mikko
Leskelä, Markku
2020
Producción Científica
Amorphous SiO2–Nb2O5 nanolaminates and mixture films were grown by atomic layer deposition. The films were grown at 300 °C from Nb(OC2H5)5, Si2(NHC2H5)6, and O3 to thicknesses ranging from 13 to 130 nm. The niobium to silicon atomic ratio was varied in the range of 0.11–7.20. After optimizing the composition, resistive switching properties could be observed in the form of characteristic current–voltage behavior. Switching parameters in the conventional regime were well defined only in a SiO2:Nb2O5 mixture at certain, optimized, composition with Nb:Si atomic ratio of 0.13, whereas low-reading voltage measurements allowed recording memory effects in a wider composition range.
application/pdf
http://uvadoc.uva.es/handle/10324/45172
eng
IOP Publishing
2202 Electromagnetismo
Silicon oxide-niobium oxide mixture films and nanolaminates grown by atomic layer deposition from niobium pentaethoxide and hexakis(ethylamino) disilane
info:eu-repo/semantics/article
TEXT
UVaDOC. Repositorio Documental de la Universidad de Valladolid
Hispana