2024-03-29T12:01:34Zhttps://uvadoc.uva.es/oai/requestoai:uvadoc.uva.es:10324/486392022-09-01T21:15:21Zcom_10324_43510com_10324_954com_10324_894col_10324_43513
García García, Héctor
Vinuesa Sanz, Guillermo
González Ossorio, Óscar
Sahelices Fernández, Benjamín
Castán Lanaspa, María Helena
Dueñas Carazo, Salvador
Bargalló González, Mireia
Campabadal Segura, Francesca
2021
Producción Científica
In this work, we have studied the set and the reset transitions in hafnium oxide-based
metal-insulator-metal ReRAM devices using a capacitor discharge. Instead of applying a
conventional voltage or current signal, we have discharged a capacitor through the
devices to perform both transitions. In this way, both transitions are shown to be
controllable. An accumulative process is observed if we apply consecutive discharges,
and, when increasing the capacitor voltage in each discharge, the transitions between both
resistance states are complete. In addition, it has been shown that faster transitions require larger capacitor voltages.
application/pdf
https://uvadoc.uva.es/handle/10324/48639
eng
Elsevier
22 Física
33 Ciencias Tecnológicas
Study of the set and reset transitions in HfO2-based ReRAM devices using a capacitor discharge
info:eu-repo/semantics/article
TEXT
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