2024-03-28T12:44:47Zhttps://uvadoc.uva.es/oai/requestoai:uvadoc.uva.es:10324/486342022-12-01T22:15:24Zcom_10324_43510com_10324_954com_10324_894col_10324_43513
Analysis of the performance of Nb2O5-doped SiO2-based MIM devices for memory and neural computation applications
González Ossorio, Óscar
Vinuesa Sanz, Guillermo
García García, Héctor
Sahelices Fernández, Benjamín
Dueñas Carazo, Salvador
Castán Lanaspa, María Helena
Ritala, Mikko
Leskelä, Markku
Kemell, Marianna
Kukli, Kaupo
RRAM
Niobium oxide
Silicon oxide
22 Física
33 Ciencias Tecnológicas
Producción Científica
Since two decades ago, research on resistive memories has continuosly grown, gathering relevance through the variety of different
technologies that fit into the non-volatile memories’ area. In this study, we discuss the performance and electrical characteristics
of RRAM cells constituted by MIM stacks with dielectric formed by Nb2O5-doped SiO2. We report experimental results that show
a clear improvement in the resistive behavior of the devices and an excellent analogical control of the intermediate levels between
high-resistance and low-resistance states.
Ministerio de Ciencia, Innovación y Universidades con el apoyo de fondos Feder (grant TEC2017-84321-C4-2-R)
Finnish Centre of Excellence in Atomic Layer Deposition (284623)
Estonian Research Agency (PRG753)
2021-09-10T11:10:49Z
2021-09-10T11:10:49Z
2021
info:eu-repo/semantics/article
info:eu-repo/semantics/acceptedVersion
Solid-State Electronics, 2021, vol. 186, p. 108114
0038-1101
https://uvadoc.uva.es/handle/10324/48634
10.1016/j.sse.2021.108114
108114
Solid-State Electronics
186
eng
https://www.sciencedirect.com/science/article/pii/S003811012100157X
Attribution-NonCommercial-NoDerivatives 4.0 Internacional
info:eu-repo/semantics/openAccess
http://creativecommons.org/licenses/by-nc-nd/4.0/
© 2021 Elsevier
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http://creativecommons.org/licenses/by-nc-nd/4.0/
UVaDOC. Repositorio Documental de la Universidad de Valladolid
https://uvadoc.uva.es/handle/10324/48634