2026-03-14T06:12:37Zhttps://uvadoc.uva.es/oai/request

oai:uvadoc.uva.es:10324/446632021-06-24T07:23:17Zcom_10324_43510com_10324_954com_10324_894col_10324_43513

00925njm 22002777a 4500 dc Kalam, Kristjan author Seemen, Helina author Mikkor, Mats author Ritslaid, Peeter author Stern, Raivo author Dueñas Carazo, Salvador author Castán Lanaspa, María Helena author Tamm, Aile author Kukli, Kaupo author 2018 Atomic layer deposition method was employed to deposit thin films consisting of ZrO2 and HfO2. Zirconia films were doped with hafnia and vice versa, and also nanolaminates were formed. All depositions were carried out at 300°C. Most films were crystalline in their as-deposited state. Zirconia exhibited the metastable cubic and tetragonal phases by a large majority, whereas hafnia was mostly in its stable monoclinic phase. Magnetic and electrical properties of the films were assessed. Un-doped zirconia was ferromagnetic and this property diminished with increasing the amount of hafnia in a film. All films exhibited ferroelectric-like behavior and the polarization curves also changed with respect to the film composition. ECS Journal of Solid State Science and Technology, 2018, vol. 7, n. 9. p. 117-122 2162-8777 http://uvadoc.uva.es/handle/10324/44663 10.1149/2.0041809jss Electric and magnetic properties of atomic layer deposited ZrO2-HfO2 thin films