2024-03-28T18:07:02Zhttps://uvadoc.uva.es/oai/requestoai:uvadoc.uva.es:10324/447012021-11-16T13:30:31Zcom_10324_43510com_10324_954com_10324_894col_10324_43513
00925njm 22002777a 4500
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Kukli, Kaupo
author
Kemell, Marianna
author
Castán Lanaspa, María Helena
author
Dueñas Carazo, Salvador
author
Link, Joosep
author
Stern, Raivo
author
Heikkilä, Mikko J.
author
Jõgiaas, Taivo
author
Kozlova, Jekaterina
author
Rähn, Mihkel
author
Mizohata, Kenichiro
author
2020
SiO2-Fe2O3 mixture films and nanolaminates were grown by atomic layer deposition from iron trichloride, hexakis(ethylamino)disilane, and ozone at 300 °C. Orthorhombic ɛ-Fe2O3 was identified in Fe2O3 reference films and in Fe2O3 layers grown to certain thicknesses between amorphous SiO2 layers. SiO2-Fe2O3 films could be magnetized in external fields, exhibiting saturation and hysteresis in nonlinear magnetization-field curves. Electrical resistive switching, markedly dependent on the ratio of the component oxides, was also observed in films with proper composition. For relatively conductive films, application of small signal measurements allowed one to record memory maps with notable squareness and defined distinction between high and low conductance states.
Journal of Vacuum Science & Technology A, 2020, vol. 38, n. 4. 11 p.
1520-8559
http://uvadoc.uva.es/handle/10324/44701
10.1116/6.0000212
Magnetic properties and resistive switching in mixture films and nanolaminates consisting of iron and silicon oxides grown by atomic layer deposition