2024-03-28T08:13:21Zhttps://uvadoc.uva.es/oai/requestoai:uvadoc.uva.es:10324/322972021-06-24T07:19:16Zcom_10324_1148com_10324_931com_10324_894com_10324_28025com_10324_954col_10324_1272col_10324_28028
UVaDOC
author
López Martín, Pedro
author
Santos Tejido, Iván
author
Aboy Cebrián, María
author
Marqués Cuesta, Luis Alberto
author
Trochet, M.
author
Mousseau, N.
author
Pelaz Montes, María Lourdes
2018-10-24T11:51:00Z
2018-10-24T11:51:00Z
2017
2017 Spanish Conference on Electron Devices (CDE). Proceedings, 8-10 February 2017, Barcelona
978-1-5090-5072-7
http://uvadoc.uva.es/handle/10324/32297
https://doi.org/10.1109/CDE.2017.7905224
The modeling of self-interstitial defects evolution is key for process and device optimization. For a self-interstitial cluster of a given size, several configurations or topologies exist, but conventional models assume that the minimum energy one is instantaneously reached. The existence of significant energy barriers for configurational transitions may change the picture of defect evolution in non-equilibrium processes (such as ion implantation), and contribute to explain anomalous defect observations. In this work, we present a method to determine the energy barriers for topological transitions among small self-interstitial defects, which is applied to characterize the Si self-interstitial and the di-interstitial cluster.
eng
Evaluation of energy barriers for topological transitions of Si self-interstitial clusters by classical molecular dynamics and the kinetic activation-relaxation technique
info:eu-repo/semantics/conferenceObject
URL
https://uvadoc.uva.es/bitstream/10324/32297/1/2017_Lopez_CDE2017.pdf
File
MD5
ae35484cb4a6f2a6c830caf68dd13af4
202186
application/pdf
2017_Lopez_CDE2017.pdf