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oai:uvadoc.uva.es:10324/446632021-06-24T07:23:17Zcom_10324_43510com_10324_954com_10324_894col_10324_43513

Kalam, Kristjan Seemen, Helina Mikkor, Mats Ritslaid, Peeter Stern, Raivo Dueñas Carazo, Salvador Castán Lanaspa, María Helena Tamm, Aile Kukli, Kaupo 2021-01-08T11:59:55Z 2021-01-08T11:59:55Z 2018 ECS Journal of Solid State Science and Technology, 2018, vol. 7, n. 9. p. 117-122 2162-8777 http://uvadoc.uva.es/handle/10324/44663 10.1149/2.0041809jss Atomic layer deposition method was employed to deposit thin films consisting of ZrO2 and HfO2. Zirconia films were doped with hafnia and vice versa, and also nanolaminates were formed. All depositions were carried out at 300°C. Most films were crystalline in their as-deposited state. Zirconia exhibited the metastable cubic and tetragonal phases by a large majority, whereas hafnia was mostly in its stable monoclinic phase. Magnetic and electrical properties of the films were assessed. Un-doped zirconia was ferromagnetic and this property diminished with increasing the amount of hafnia in a film. All films exhibited ferroelectric-like behavior and the polarization curves also changed with respect to the film composition. eng info:eu-repo/semantics/openAccess http://creativecommons.org/licenses/by-nc-nd/4.0/ © 2018 IOP Publishing Attribution-NonCommercial-NoDerivatives 4.0 Internacional Electric and magnetic properties of atomic layer deposited ZrO2-HfO2 thin films info:eu-repo/semantics/article