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oai:uvadoc.uva.es:10324/453972023-04-12T10:57:57Zcom_10324_43510com_10324_954com_10324_894col_10324_43513

García García, Héctor Bargalló González, Mireia Mallol, M. M. Castán Lanaspa, María Helena Dueñas Carazo, Salvador Campabadal Segura, Francesca Acero, M. C. Sambuco Salomone, L. Faigón, A. 2021-02-25T13:14:32Z 2021-02-25T13:14:32Z 2018 Journal of Electronic Materials, 2018, vol. 47. p. 5013-5018 0361-5235 http://uvadoc.uva.es/handle/10324/45397 10.1007/s11664-018-6257-y The γ-radiation effects on the electrical characteristics of metal–insulator-semiconductor capacitors based on HfO2, and on the resistive switching characteristics of the structures have been studied. The HfO2 was grown directly on silicon substrates by atomic layer deposition. Some of the capacitors were submitted to a γ ray irradiation using three different doses (16 kGy, 96 kGy and 386 kGy). We studied the electrical characteristics in the pristine state of the capacitors. The radiation increased the interfacial state densities at the insulator/semiconductor interface, and the slow traps inside the insulator near the interface. However, the leakage current is not increased by the irradiation, and the conduction mechanism is Poole–Frenkel for all the samples. The switching characteristics were also studied, and no significant differences were obtained in the performance of the devices after having been irradiated, indicating that the fabricated capacitors present good radiation hardness for its use as a RS element. eng info:eu-repo/semantics/openAccess http://creativecommons.org/licenses/by-nc-nd/4.0/ © 2018 Springer Attribution-NonCommercial-NoDerivatives 4.0 Internacional Electrical characterization of defects created by γ-radiation in HfO2-based MIS structures for RRAM applications info:eu-repo/semantics/article