2024-03-29T10:35:51Zhttps://uvadoc.uva.es/oai/requestoai:uvadoc.uva.es:10324/217592021-06-23T10:16:47Zcom_10324_1158com_10324_931com_10324_894col_10324_1242
Local electric field enhancement at the heterojunction of Si/SiGe axially heterostructured nanowires under laser illumination
Pura Ruiz, José Luis
Anaya, Julián
Souto Bartolomé, Jorge Manuel
Carmelo Prieto, Ángel
Rodríguez, Andrés
Rodríguez, Tomás
Jiménez López, Juan Ignacio
Laser illumination
Producción Científica
We present a phenomenon concerning the electric eld enhancement at the
heterojunction region of axially heterostructured Si/SiGe nanowires when the nanowire
is illuminated by a focused laser beam. The electric eld is sensed by micro Raman
spectroscopy, which permits to reveal the enhancement of the Raman signal arising
from the heterojunction region; the Raman signal per unit volume increases at least
10 times with respect to the homogeneous Si, and SiGe nanowire segments. In order
to explore the physical meaning of this phenomenon, a 3-dimensional solution of the
Maxwell equations of the interaction between the focused laser beam and the nanowire
was carried out by nite element methods. A local enhancement of the electric eld
at the heterojunction was deduced; however, the magnitude of the electromagnetic
eld enhancement only approaches the experimental one when the free carriers are
considered, showing enhanced absorption at the carrier depleted heterojunction region.
The existence of this e ect promises a way to improve the photon harvesting using
axially heterostructured semiconductor NWs.
Junta de Castilla y León (programa de apoyo a proyectos de investigación – Ref. VA302U13)
2016-12-15T10:12:44Z
2016-12-15T10:12:44Z
2016
info:eu-repo/semantics/article
https://doi.org/10.1088/0957-4484/27/45/455709
Nanotechnology, Volume 27, Number 45
0957-4484
http://uvadoc.uva.es/handle/10324/21759
eng
http://iopscience.iop.org/journal/0957-4484
Attribution-NonCommercial-NoDerivatives 4.0 International
info:eu-repo/semantics/openAccess
http://creativecommons.org/licenses/by-nc-nd/4.0/
application/pdf
IOP