2024-03-29T08:56:13Zhttps://uvadoc.uva.es/oai/requestoai:uvadoc.uva.es:10324/319632021-06-24T07:18:31Zcom_10324_1148com_10324_931com_10324_894com_10324_28025com_10324_954col_10324_1270col_10324_28026
Elucidating the atomistic mechanisms driving self-diffusion of amorphous Si during annealing
Santos Tejido, Iván
Pelaz Montes, María Lourdes
Marqués Cuesta, Luis Alberto
Colombo, Luciano
Producción Científica
We have analyzed the atomic rearrangements underlying self-diffusion in amorphous Si during annealing using tight-binding molecular dynamics simulations. Two types of amorphous samples with different structural features were used to analyze the influence of coordination defects. We have identified several types of atomic rearrangement mechanisms, and we have obtained an effective migration energy of around 1 eV. We found similar migration energies for both types of samples, but higher diffusivities in the one with a higher initial percentage of coordination defects.
2018-10-02T09:30:37Z
2018-10-02T09:30:37Z
2011
info:eu-repo/semantics/article
Physical Review B, 2011, 83, 153201
2469-9950
http://uvadoc.uva.es/handle/10324/31963
https://doi.org/10.1103/PhysRevB.83.153201
eng
https://journals.aps.org/prb/abstract/10.1103/PhysRevB.83.153201
info:eu-repo/semantics/openAccess
http://creativecommons.org/licenses/by-nc-nd/4.0/
© 2011 American Physical Society
Attribution-NonCommercial-NoDerivatives 4.0 International
American Physical Society
SI