2026-05-20T08:42:05Zhttps://uvadoc.uva.es/oai/request

oai:uvadoc.uva.es:10324/449182021-06-24T07:23:33Zcom_10324_43510com_10324_954com_10324_894col_10324_43513

Memory maps : Reading RRAM devices without power consumption Dueñas Carazo, Salvador Castán Lanaspa, María Helena Kukli, Kaupo Mikkor, Mats Kalam, Kristjan Arroval, T. Tamm, Aile Producción Científica A comparative study of MIM-RRAM structures with different insulator materials is presented. Admittance memory mapping was carried out at 0 V dc bias, revealing two clearly separated states, both in terms of conductance and susceptance. The memory in the ON state can be modeled by means of a two parameter (resistance and inductance) equivalent circuit. The parameter extraction provides memory maps for the resistance and the inductance as well. The transition shapes between the ON and OFF state are different for each structure due to specific physical mechanisms. 2021-01-12T07:53:09Z 2021-01-12T07:53:09Z 2018 info:eu-repo/semantics/article ECS Transactions, 2018, vol. 85, n. 8. p. 201-205 1938-6737 http://uvadoc.uva.es/handle/10324/44918 10.1149/08508.0201ecst eng https://iopscience.iop.org/article/10.1149/08508.0201ecst info:eu-repo/semantics/openAccess http://creativecommons.org/licenses/by-nc-nd/4.0/ © 2018 IOP Publishing Attribution-NonCommercial-NoDerivatives 4.0 Internacional IOP Publishing SI