RT info:eu-repo/semantics/article T1 Fully porous GaN p-n junction diodes fabricated by chemical vapor deposition A1 Bilousov, O. V. A1 Carvajal, Joan Josep A1 Geaney, H. A1 Zubialevich, V. A1 Parbrook, Peter A1 Martínez Sacristán, Óscar A1 Jiménez López, Juan Ignacio A1 Díaz, Francesc A1 Aguiló, Magdalena A1 O'Dwyer, C. K1 Chemical vapor deposition AB Modern society is experiencing an ever-increasing demand for energy to power a vast array of electrical and mechanical devices. A significant amount of the energy consumed is used for lighting purposes. For instance, this demand is ~17% of the total energy consumed in the USA in 2011 [1]. Thus, any approach that can reduce energy consumption is important. In this context, the development of light emitting diodes (LEDs) incorporating at least one porous component, with improved light extraction efficiency, is being explored intensively [2]. However, up to now, only partially porous p-n junctions have been analyzed for this purpose. PB American Chemical Society SN 1944-8244 YR 2014 FD 2014 LK http://uvadoc.uva.es/handle/10324/21752 UL http://uvadoc.uva.es/handle/10324/21752 LA eng NO ACS Applied Materials & Interfaces 6, p. 17954-17964 (2014) NO Producción Científica DS UVaDOC RD 22-nov-2024