RT info:eu-repo/semantics/article
T1 Fully porous GaN p-n junction diodes fabricated by chemical vapor deposition
A1 Bilousov, O. V.
A1 Carvajal, Joan Josep
A1 Geaney, H.
A1 Zubialevich, V.
A1 Parbrook, Peter
A1 Martínez Sacristán, Óscar
A1 Jiménez López, Juan Ignacio
A1 Díaz, Francesc
A1 Aguiló, Magdalena
A1 O'Dwyer, C.
K1 Chemical vapor deposition
AB Modern society is experiencing an ever-increasing demand for energy to power a vast array of electrical and mechanical devices. A significant amount of the energy consumed is used for lighting purposes. For instance, this demand is ~17% of the total energy consumed in the USA in 2011 [1]. Thus, any approach that can reduce energy consumption is important. In this context, the development of light emitting diodes (LEDs) incorporating at least one porous component, with improved light extraction efficiency, is being explored intensively [2]. However, up to now, only partially porous p-n junctions have been analyzed for this purpose.
PB American Chemical Society
SN 1944-8244
YR 2014
FD 2014
LK http://uvadoc.uva.es/handle/10324/21752
UL http://uvadoc.uva.es/handle/10324/21752
LA eng
NO ACS Applied Materials & Interfaces 6, p. 17954-17964 (2014)
NO Producción Científica
DS UVaDOC
RD 26-abr-2024