RT info:eu-repo/semantics/article
T1 Fully porous GaN p-n junctions fabricated by Chemical Vapor Deposition: a green technology towards more efficient LEDs
A1 Carvajal, Joan Josep
A1 Mena Rodríguez, José Manuel
A1 Bilousov, O. V.
A1 Martínez Sacristán, Óscar
A1 Jiménez López, Juan Ignacio
A1 Zubialevich, V.
A1 Parbrook, Peter
A1 Geaney, H.
A1 O’Dwyer, C.
A1 Díaz, Francesc
A1 Aguiló, Magdalena
K1 LEDs
AB Porous GaN based LEDs produced by corrosion etching techniquesdemonstrated enhanced light extraction efficiency in the past.However, these fabrication techniques require further postgrownprocessing steps, which increase the price of the final system. Inthis paper, we review the process followed towards the fabricationof fully porous GaN p-n junctions directly during the growth step,using a sequential chemical vapor deposition (CVD) process toproduce the different layers that form the p-n junction.
PB Electrochemical Society
SN 1938-5862
YR 2015
FD 2015
LK http://uvadoc.uva.es/handle/10324/21754
UL http://uvadoc.uva.es/handle/10324/21754
LA eng
NO ECS Transactions, 2015, vol. 66, 163
NO Producción Científica
DS UVaDOC
RD 19-nov-2024