RT info:eu-repo/semantics/conferenceObject
T1 About the critical temperature for catastrophic optical damage in high power laser diodes
A1 Souto Bartolomé, Jorge Manuel
A1 Rodríguez, M.
A1 Anaya, Julián
A1 Torres, Alfredo
A1 Jiménez López, Juan Ignacio
K1 Laser diodes
AB Degradation of laser diodes during operation constitutes a serious drawback for both laser manufacturers andend users. The catastrophic optical damage (COD) of laser diodes consists of the sudden drop off of the opticalpower. COD involves a thermal runaway mechanism in which the active zone of the laser is molten. Degradeddevices present dark line defects (DLDs) produced during the laser operation; these DLDs are regions of theactive zone of the laser without emission. These dark lines are locally generated, either at the front facet, orinside the cavity, and then propagate along the cavity driven by the optical field. The physical mechanismleading to the formation of such lines and the associated loss of output optical power is described in theliterature, but there is not consensus about the origin of the COD. Usually, the COD is described in a sequenceof different phases, in the first phase the process is incubated, this phase ends when a critical temperature isreached; then, it is followed by a sharp increase of the optical absorption with the corresponding sharptemperature increase which leads to melting and the failure of the device. Here we will focus on the first phase,we will discuss about the critical temperature, and the physical mechanisms involved in this phase; in particular,we will describe the conditions under which such critical temperature can be reached. For this we will analyzethe conditions for reaching the critical temperature and the influence of the laser structure on the laser strength.We compare the critical temperature estimated by our thermomechanical model with the values experimentallyreported, which range between 130ºC and 180ºC.
YR 2014
FD 2014
LK http://uvadoc.uva.es/handle/10324/21785
UL http://uvadoc.uva.es/handle/10324/21785
LA eng
NO International Symposium on Reliability of Optoelectronics for Systems (ISROS), Toulouse, 2014, 5 p.
NO Producción Científica
DS UVaDOC
RD 06-ago-2024