RT info:eu-repo/semantics/article
T1 Raman Spectroscopy in Group IV Nanowires and Nanowire Axial Heterostructures
A1 Anaya, Julián
A1 Torres, Alfredo
A1 Jiménez López, Juan Ignacio
A1 Rodríguez, Andrés
A1 Rodríguez, Tomás
A1 Ballesteros, Carmen
K1 Raman Spectroscopy
AB The control of the SiGe NW composition is fundamental for the fabrication of highquality heterostructures. Raman spectroscopy has been used to analyse the compositionof SiGe alloys. We present a study of the Raman spectrum of SiGe nanowires andSiGe/Si heterostructures. The inhomogeneity of the Ge composition deduced from theRaman spectrum is explained by the existence of a Ge-rich outer shell and by theinteraction of the NW with the electromagnetic field associated with the laser beam.
PB Cambridge University Press
YR 2014
FD 2014
LK http://uvadoc.uva.es/handle/10324/21797
UL http://uvadoc.uva.es/handle/10324/21797
LA eng
NO MRS Proceedings, 2014, Volume 1659, p. 143-148
NO Producción Científica
DS UVaDOC
RD 25-abr-2024