RT info:eu-repo/semantics/article T1 Raman Spectroscopy in Group IV Nanowires and Nanowire Axial Heterostructures A1 Anaya, Julián A1 Torres, Alfredo A1 Jiménez López, Juan Ignacio A1 Rodríguez, Andrés A1 Rodríguez, Tomás A1 Ballesteros, Carmen K1 Raman Spectroscopy AB The control of the SiGe NW composition is fundamental for the fabrication of highquality heterostructures. Raman spectroscopy has been used to analyse the compositionof SiGe alloys. We present a study of the Raman spectrum of SiGe nanowires andSiGe/Si heterostructures. The inhomogeneity of the Ge composition deduced from theRaman spectrum is explained by the existence of a Ge-rich outer shell and by theinteraction of the NW with the electromagnetic field associated with the laser beam. PB Cambridge University Press YR 2014 FD 2014 LK http://uvadoc.uva.es/handle/10324/21797 UL http://uvadoc.uva.es/handle/10324/21797 LA eng NO MRS Proceedings, 2014, Volume 1659, p. 143-148 NO Producción Científica DS UVaDOC RD 25-nov-2024