RT info:eu-repo/semantics/article
T1 Nitrogen-carbon graphite-like semiconductor synthesized from uric acid
A1 Dante, Roberto C.
A1 Chamorro Posada, Pedro
A1 Vázquez Cabo, José
A1 Rubiños López, Óscar
A1 Sánchez Arévalo, Francisco Manuel
A1 Huerta, Lázaro
A1 Martín Ramos, Pablo
A1 Lartundo Rojas, Luis
A1 Ávila Vega, Carlos Fabián
A1 Rivera Tapia, Edgar David
A1 Fajardo Pruna, Cristian
A1 Ávila Vega, Álvaro J.
A1 Solorza Feria, Omar
AB A new carbon-nitrogen organic semiconductor has been synthesized by pyrolysis of uric acid. This layered carbon-nitrogen material contains imidazole-, pyridine (naphthyridine)- and graphitic-like nitrogen, as evinced by infrared and X-ray photoelectron spectroscopies. Quantum chemistry calculations support that it would consist of a 2D polymeric material held together by hydrogen bonds. Layers are stacked with an interplanar distance between 3.30 and 3.36 Å, as in graphite and coke. Terahertz spectroscopy shows a behavior similar to that of amorphous carbons, such as coke, with non-interacting layers. This material features substantial differences from polymeric carbon nitride, with some characteristics closer to those of nitrogen-doped graphene, in spite of its higher nitrogen content. The direct optical band gap, dependent on the polycondensation temperature, ranges from 2.10 to 2.32 eV. Although in general the degree of crystallinity is low, the material synthesized at 600 °C is composed of globular hollow particles, in which spots with a certain degree of crystallinity can be found.
PB Elsevier
YR 2017
FD 2017
LK http://uvadoc.uva.es/handle/10324/23928
UL http://uvadoc.uva.es/handle/10324/23928
LA eng
NO Carbon, Septiembre 2017, vol. 121, 368–379
DS UVaDOC
RD 24-nov-2024