RT info:eu-repo/semantics/article
T1 Improved physical models for advanced silicon device processing
A1 Pelaz Montes, María Lourdes
A1 Marqués Cuesta, Luis Alberto
A1 Aboy Cebrián, María
A1 López Martín, Pedro
A1 Santos Tejido, Iván
K1 Silicon
K1 Ion implantation
K1 Silicio
K1 Implantación de iones
AB We review atomistic modeling approaches for issues related to ion implantation and annealing in advanced device processing. We describe how models have been upgraded to capture physical mechanisms in more detail as a response to the accuracy demanded in modern process and device modeling. Implantation and damage models based on the binary collision approximation have been improved to describe the direct formation of amorphous pockets for heavy or molecular ions. The use of amorphizing implants followed by solid phase epitaxial regrowth has motivated the development of detailed models that account for amorphization and recrystallization, considering the influence of crystal orientation and stress conditions. We apply simulations to describe the role of implant parameters to minimize residual damage, and we address doping issues that arise in non-planar structures such as FinFETs.
PB Elsevier
YR 2017
FD 2017
LK http://uvadoc.uva.es/handle/10324/28012
UL http://uvadoc.uva.es/handle/10324/28012
LA eng
NO Materials Science in Semiconductor Processing Volume 62, 2017, Pages 62-79
NO Producción Científica
DS UVaDOC
RD 04-abr-2025