RT info:eu-repo/semantics/article
T1 Atomistic modeling of ion implantation technologies in silicon
A1 Marqués Cuesta, Luis Alberto
A1 Santos Tejido, Iván
A1 Pelaz Montes, María Lourdes
A1 López Martín, Pedro
A1 Aboy Cebrián, María
K1 Atomistic simulation
K1 Multi-scale schemes
K1 Silicio
AB Requirements for the manufacturing of electronic devices at the nanometric scale are becoming more and more demanding on each new technology node, driving the need for the fabrication of ultra-shallow junctions and finFET structures. Main implantation strategies, cluster and cold implants, are aimed to reduce the amount of end-of-range defects through substrate amorphization. During finFET doping the device body gets amorphized, and its regrowth is more problematic than in the case of conventional planar devices. Consequently, there is a renewed interest on the modeling of amorphization and recrystallization in the front-end processing of Si. We present multi-scale simulation schemes to model amorphization and recrystallization in Si from an atomistic perspective. Models are able to correctly predict damage formation, accumulation and regrowth, both in the ballistic and thermal-spike regimes, in very good agreement with conventional molecular dynamics techniques but at a much lower computational cost.
PB Elsevier
YR 2015
FD 2015
LK http://uvadoc.uva.es/handle/10324/28015
UL http://uvadoc.uva.es/handle/10324/28015
LA eng
NO Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Volume 352, 2015, Pages 148-151
NO Producción Científica
DS UVaDOC
RD 28-dic-2024