RT info:eu-repo/semantics/article
T1 Modeling and experimental characterization of stepped and v-shaped {311} defects in silicon
A1 Marqués Cuesta, Luis Alberto
A1 Aboy Cebrián, María
A1 Dudeck, Karleen J.
A1 Botton, Gianluigi A.
A1 Knights, Andrew P.
A1 Gwilliam, Russell M.
K1 Atomistic model
K1 Silicon
K1 Silicio
AB We propose an atomistic model to describe extended {311} defects in silicon. It is based on the combination of interstitial and bond defect chains. The model is able to accurately reproduce not only planar {311} defects but also defect structures that show steps, bends, or both. We use molecular dynamics techniques to show that these interstitial and bond defect chains spontaneously transform into extended {311} defects. Simulations are validated by comparing with precise experimental measurements on actual {311} defects. The excellent agreement between the simulated and experimentally derived structures, regarding individual atomic positions and shape of the distinct structural {311} defect units, provides strong evidence for the robustness of the proposed model.
PB AIP Publishing
SN 0021-8979
YR 2014
FD 2014
LK http://uvadoc.uva.es/handle/10324/28616
UL http://uvadoc.uva.es/handle/10324/28616
LA eng
NO Journal of Applied Physics, 2014, 115, p. 143514
NO Producción Científica
DS UVaDOC
RD 21-dic-2024