RT info:eu-repo/semantics/article
T1 Mapping of mechanical strain induced by thin and narrow dielectric stripes on InP surfaces
A1 Landesman, Jean-Pierre
A1 Cassidy, Daniel T.
A1 Fouchier, Marc
A1 Pargon, Erwine
A1 Levallois, Christophe
A1 Mokhtari, Merwan
A1 Jiménez López, Juan Ignacio
A1 Torres, Alfredo
K1 Semiconductor materials; (250.5230) Photoluminescence; (250.1500) Cathodoluminescence; (310.4925) Other properties (stress, chemical, etc.); (310.5448) Polarization, other optical properties; (240.0310) Thin films
AB We investigated deformation of InP that was introduced bythin, narrow, dielectric SiNx stripes on the (100) surface ofInP substrates. Quantitative optical measurements wereperformed using two different techniques based on luminescencefrom the InP: first, by degree of polarization ofphotoluminescence; and second, by cathodoluminescence spectroscopy. The two techniques provide complementary information on deformation of the InP and thus together provide a means to evaluate approaches to simulation of the deformation owing to dielectric stripes. Ultimately, these deformations can be used to estimate changes in refractive index and gain that are a result of the stripes
PB Optical Society of America
YR 2018
FD 2018
LK http://uvadoc.uva.es/handle/10324/31318
UL http://uvadoc.uva.es/handle/10324/31318
LA eng
NO Optics Letters, Vol. 43, No. 15
DS UVaDOC
RD 25-nov-2024