RT info:eu-repo/semantics/bookPart
T1 Photoluminescence Imaging and LBIC Characterization of Defects in mc-Si Solar Cells
A1 Sánchez, L.A.
A1 Moretón Fernández, Ángel
A1 Guada, Miguel
A1 Rodríguez Conde, Sofía
A1 Martínez Sacristán, Óscar
A1 González Rebollo, Miguel Ángel
A1 Jiménez López, Juan Ignacio
K1 Solar cells multicrystalline silicon
K1 UMG silicon
K1 LBIC
AB Today’s photovoltaic market is dominated by multicrystalline silicon (mc-Si) based solar cells with around 70% of worldwide production. In order to improve the quality of the Si material, a proper characterization of the electrical activity in mc-Si solar cells is essential. A full-wafer characterization technique such as photoluminescence imaging (PLi) provides a fast inspection of the wafer defects, though at the expense of the spatial resolution. On the otherhand, a study of the defects at a microscopic scale can be achieved through the light-beam induced current technique. The combination of these macroscopic and microscopic resolution techniques allows a detailed study of the electrical activity of defects in mc-Si solar cells. In this work, upgraded metallurgical grade Si solar cells are studied using these two techniques.
PB Springer
SN 0361-5235
YR 2018
FD 2018
LK http://uvadoc.uva.es/handle/10324/31321
UL http://uvadoc.uva.es/handle/10324/31321
LA eng
NO Journal of Electronic Materials, 2018, Volume 47, Issue 9, pp 5077–5082
DS UVaDOC
RD 12-sep-2024