RT info:eu-repo/semantics/article
T1 The curious case of thin-body Ge crystallization
A1 Duffy, Ray
A1 Shayesteh, M.
A1 McCarthy, B.
A1 Blake, A.
A1 White, M.
A1 Scully, J.
A1 Yu, R.
A1 Kelleher, A. M.
A1 Schmidt, M.
A1 Petkov, N.
A1 Pelaz Montes, María Lourdes
A1 Marqués Cuesta, Luis Alberto
K1 Cristalización
K1 Crystallization
AB The authors investigate the templated crystallization of thin-body Ge fin structures with high aspect ratios. Experimental variables include fin thickness and thermal treatments, with fin structures oriented in the 〈110〉 direction. Transmission electron microscopy determined that various crystal defects form during crystallization of amorphous Ge regions, most notably {111} stacking faults, twin boundaries, and small crystallites. In all cases, the nature of the defects is dependent on the fin thickness and thermal treatments applied. Using a standard 600 °C rapid-thermal-anneal, Gestructures with high aspect ratios crystallize with better crystal quality and fewer uncured defects than the equivalent Si case, which is a cause for optimism for thin-film Ge devices.
PB AIP Publishing
SN 0003-6951
YR 2011
FD 2011
LK http://uvadoc.uva.es/handle/10324/31962
UL http://uvadoc.uva.es/handle/10324/31962
LA eng
NO Applied Physics Letters, 2011, 99, 131901
NO Producción Científica
DS UVaDOC
RD 23-nov-2024