RT info:eu-repo/semantics/article
T1 Elucidating the atomistic mechanisms driving self-diffusion of amorphous Si during annealing
A1 Santos Tejido, Iván
A1 Pelaz Montes, María Lourdes
A1 Marqués Cuesta, Luis Alberto
A1 Colombo, Luciano
K1 Silicio cristalino
K1 Crystalline silicon
AB We have analyzed the atomic rearrangements underlying self-diffusion in amorphous Si during annealing using tight-binding molecular dynamics simulations. Two types of amorphous samples with different structural features were used to analyze the influence of coordination defects. We have identified several types of atomic rearrangement mechanisms, and we have obtained an effective migration energy of around 1 eV. We found similar migration energies for both types of samples, but higher diffusivities in the one with a higher initial percentage of coordination defects.
PB American Physical Society
SN 2469-9950
YR 2011
FD 2011
LK http://uvadoc.uva.es/handle/10324/31963
UL http://uvadoc.uva.es/handle/10324/31963
LA eng
NO Physical Review B, 2011, 83, 153201
NO Producción Científica
DS UVaDOC
RD 04-dic-2024