RT info:eu-repo/semantics/article
T1 Self-trapping in B-doped amorphous Si: Intrinsic origin of low acceptor efficiency
A1 Santos Tejido, Iván
A1 Castrillo, P.
A1 Windl, W.
A1 Drabold, D. A.
A1 Pelaz Montes, María Lourdes
A1 Marqués Cuesta, Luis Alberto
K1 Silicio cristalino
K1 Crystalline silicon
AB We have used ab initio simulations to study the doping efficiency of amorphous semiconductors, in particular of B-doped amorphous Si. We have found that even in the optimum case of substitutional doping in dangling-bond free amorphous Si the holes provided by B atoms do not behave as free carriers. Instead, they are trapped into regions with locally distorted bond angles. Thus, the effective activation energy for hole conduction turns to be the hole binding energy to these traps. In the case of high B concentration, the trap states move deeper in the gap and the binding energy and spatial localization of holes increase. In addition, B atoms have lower energies for shorter bond lengths, configurations favored in the vicinity of these traps.
PB American Physical Society
SN 2469-9950
YR 2010
FD 2010
LK http://uvadoc.uva.es/handle/10324/31965
UL http://uvadoc.uva.es/handle/10324/31965
LA eng
NO Physical Review B, 2010, 81, 033203
NO Producción Científica
DS UVaDOC
RD 23-nov-2024