RT info:eu-repo/semantics/conferenceObject
T1 Evaluation of energy barriers for topological transitions of Si self-interstitial clusters by classical molecular dynamics and the kinetic activation-relaxation technique
A1 López Martín, Pedro
A1 Santos Tejido, Iván
A1 Aboy Cebrián, María
A1 Marqués Cuesta, Luis Alberto
A1 Trochet, M.
A1 Mousseau, N.
A1 Pelaz Montes, María Lourdes
K1 Silicio
K1 Dinámica molecular
K1 Silicon
K1 Molecular dynamics
AB The modeling of self-interstitial defects evolution is key for process and device optimization. For a self-interstitial cluster of a given size, several configurations or topologies exist, but conventional models assume that the minimum energy one is instantaneously reached. The existence of significant energy barriers for configurational transitions may change the picture of defect evolution in non-equilibrium processes (such as ion implantation), and contribute to explain anomalous defect observations. In this work, we present a method to determine the energy barriers for topological transitions among small self-interstitial defects, which is applied to characterize the Si self-interstitial and the di-interstitial cluster.
PB Institute of Electrical and Electronics Engineers (IEEE)
SN 978-1-5090-5072-7
YR 2017
FD 2017
LK http://uvadoc.uva.es/handle/10324/32297
UL http://uvadoc.uva.es/handle/10324/32297
LA eng
NO 2017 Spanish Conference on Electron Devices (CDE). Proceedings, 8-10 February 2017, Barcelona
NO Producción Científica
DS UVaDOC
RD 24-abr-2024