RT info:eu-repo/semantics/conferenceObject
T1 Atomistic study of the anisotropic interaction between extended and point defects in crystalline silicon and its influence on Si self-interstitial diffusion
A1 Santos Tejido, Iván
A1 Aboy Cebrián, María
A1 Marqués Cuesta, Luis Alberto
A1 López Martín, Pedro
A1 Ruiz Prieto, Manuel
A1 Pelaz Montes, María Lourdes
A1 Hernández Díaz, A.M.
A1 Castrillo, P.
K1 Simulaciones atomísticas
K1 Silicio cristalino
K1 Atomistic simulation
K1 Crystalline silicon
AB In this work we propose a methodology to analyze the elastic energy interaction at the atomic level between Si self-interstitials and extended defects in crystalline Si. The representation of this energy in maps in 2D planes shows the anisotropic nature of the elastic interaction. This elastic energy maps can be used to understand diffusion trajectories of Si self-interstitials around extended defects obtained from classical molecular dynamics simulations. The combined analysis of these trajectories and the elastic energy maps shows preferential capture directions around extended defects.
PB Institute of Electrical and Electronics Engineers (IEEE)
SN 978-1-5090-0818-6
YR 2016
FD 2016
LK http://uvadoc.uva.es/handle/10324/32298
UL http://uvadoc.uva.es/handle/10324/32298
LA eng
NO 2016 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Nuremberg, 2016, p. 35-37
NO Producción Científica
DS UVaDOC
RD 23-abr-2024