RT info:eu-repo/semantics/article
T1 Raman Study of Multicrystalline Silicon Wafers Produced by the RST Process
A1 Tejero Riosecas, Alejandro
A1 Tupin, E.
A1 González Rebollo, Miguel Ángel
A1 Martínez Sacristán, Óscar
A1 Jiménez López, Juan Ignacio
A1 Belouet, C.
A1 Baillis, C.
K1 Silicio cristalino
K1 Crystalline Silicon
AB In the silicon ribbon on a sacrificial template process silicon is deposited on both sides of a carbon ribbon, thus forming a Si/carbon/Si trilayer. The fast cooling of the ribbon in large temperature gradients generates stresses that are detrimental to both the electrical performance and the mechanical behaviour of the wafers. The assessment of the stresses is crucial for the setting-up of thermal treatments allowing for the stress relaxation of the wafers, prior to the cell fabrication. We present an analysis of the stress in the as-grown trilayer by a simulation of the thermomechanical behaviour of the cooling ribbon. Experimental measurements of the stress in as-grown and annealed trilayers are also presented. The results permit to establish the conditions for optimized growth and annealing.
PB Polish Academy of Sciences Institute of  Physics
SN 1898-794X
YR 2014
FD 2014
LK http://uvadoc.uva.es/handle/10324/32378
UL http://uvadoc.uva.es/handle/10324/32378
LA eng
NO Acta Physica Polonica A 2014; 125, pp. 1006-1009
NO Producción Científica
DS UVaDOC
RD 27-abr-2024