RT info:eu-repo/semantics/conferenceObject
T1 IONDegradation in Si Devices in Harsh Radiation Environments: Modeling of Damage-Dopant Interactions
A1 López Martín, Pedro
A1 Aboy Cebrián, María
A1 Muñoz, I.
A1 Santos Tejido, Iván
A1 Marqués Cuesta, Luis Alberto
A1 Couso, Carlos
A1 Ullán, Miguel
A1 Pelaz Montes, María Lourdes
K1 Degradación de la corriente
K1 Current degradation
K1 Silicio
K1 Silicon
AB Electronic devices operating in harsh radiation environments must withstand high radiation levels with minimal performance degradation. Recent experiments on the radiation hardness of a new vertical p-type JFET power switch have shown a significant reduction of forward drain current under non-ionizing conditions. In this work, atomistic simulations are used to study the impact of irradiation-induced displacement damage on forward characteristics. Damage models have been updated to produce a better description of damage-dopant interactions at RT. Our results show that excess self-interstitials produced by irradiation deactivate a significant amount of B atoms, thus reducing the effective dopant concentration.
PB Institute of Electrical and Electronics Engineers (IEEE).
SN 978-1-5386-5779-9
YR 2019
FD 2019
LK http://uvadoc.uva.es/handle/10324/33892
UL http://uvadoc.uva.es/handle/10324/33892
LA eng
NO 2018 Spanish Conference on Electron Devices (CDE). Proceedings, 14-16 Nov. 2018, Salamanca.
NO Producción Científica
DS UVaDOC
RD 23-dic-2024