RT info:eu-repo/semantics/conferenceObject
T1 Modeling SiGe through classical molecular dynamics simulations: chasing an appropriate empirical potential
T2 Spanish Conference on Electron Devices (CDE 2018)
A1 Martín Encinar, Luis
A1 Santos Tejido, Iván
A1 López Martín, Pedro
A1 Marqués Cuesta, Luis Alberto
A1 Aboy Cebrián, María
A1 Pelaz Montes, María Lourdes
K1 Simulaciones de dinámica molecular
K1 Molecular dynamics simulations
AB We used classical molecular dynamics simulations to reproduce basic properties of Si, Ge and SiGe using different empirical potentials available in the literature. The empirical potential that offered the better compromise with experimental data was used to study the surface stability of these materials. We considered the (100), (100)2×1 and (111) surfaces, and we found the processing temperature range to avoid the structural degradation of studied surfaces.
PB Institute of Electrical and Electronics Engineers (IEEE).
SN 978-1-5386-5779-9
YR 2019
FD 2019
LK http://uvadoc.uva.es/handle/10324/33903
UL http://uvadoc.uva.es/handle/10324/33903
LA eng
NO 2018 Spanish Conference on Electron Devices (CDE). Proceedings, 14-16 Nov. 2018, Salamanca.
NO Producción Científica
DS UVaDOC
RD 23-dic-2024