RT info:eu-repo/semantics/article
T1 Optical and interface properties of direct InP/Si heterojunction formed by corrugated epitaxial lateral overgrowth
A1 Omanakuttan, Giriprasanth
A1 Martínez Sacristán, Óscar
A1 Marcinkevičius, Saulius
A1 Kristijonas Uždavinys, Tomas
A1 Jiménez López, Juan Ignacio
A1 Hasan, Ali
A1 Leifer, Klaus
A1 Lourdudoss, Sebastian
A1 Sun, Yan-Ting
K1 Propiedades ópticas
K1 Optical properties
K1 Técnica de crecimiento epitaxial
K1 CELOG
AB We fabricate and study direct InP/Si heterojunction by corrugated epitaxial lateral overgrowth (CELOG). The crystalline quality and depth-dependent charge carrier dynamics of InP/Si heterojunction are assessed by characterizing the cross-section of grown layer by low-temperature cathodoluminescence, time-resolved photoluminescence and transmission electron microscopy. Compared to the defective seed InP layer on Si, higher intensity band edge emission in cathodoluminescence spectra and enhanced carrier lifetime of InP are observed above the CELOG InP/Si interface despite large lattice mismatch, which are attributed to the reduced threading dislocation density realized by the CELOG method.
PB Optical Society of America
SN 2159-3930
YR 2019
FD 2019
LK http://uvadoc.uva.es/handle/10324/34905
UL http://uvadoc.uva.es/handle/10324/34905
LA eng
NO Optical Materials Express Vol. 9, Issue 3, pp. 1488-1500 (2019)
NO Producción Científica
DS UVaDOC
RD 17-jul-2024