RT info:eu-repo/semantics/article
T1 Defect recognition by means of light and electron probe techniques for the characterization of mc-Si wafers and solar cells
A1 Moralejo, B.
A1 Tejero, A.
A1 Hortelano Santos, Vanesa
A1 Martínez Sacristán, Óscar
A1 González Delgado, Manuel Ángel
A1 Jiménez López, Juan Ignacio
K1 Silicio multicristalino
K1 Multicristalline Silicon
K1 Corriente inducida por haz de luz
K1 Light Beam Induced Current
K1 Correiente inducida por electronos
K1 Electron Beam Induced Current
K1 LBIC
K1 EBIC
AB Multicristalline Silicon (mc-Si) is the preferred material for current terrestrial photovoltaic applications. However, the high density of defects present in mc-Si deteriorates the material properties, in particular the minority carrier diffusion length. For this reason, a large effort to characterize the mc-Si material is demanded, aiming to visualize the defective areas and to quantify the type of defects, density and its origin. In this work, several complementary light and electron probe techniques are used for the analysis of both mc-Si wafers and solar cells. These techniques comprise both fast and whole-area detection techniques such as Photoluminescence imaging, and highly spatially resolved time consuming techniques, such as light and electron beam induced current techniques and μRaman spectroscopy. These techniques were applied to the characterization of different mc-Si wafers for solar cells, e.g. ribbon wafers, cast mc-Si as well as quasi-monocrystalline material, upgraded metallurgical mc-Si wafers, and finished solar cells.
PB Elsevier
SN 0749-6036
YR 2016
FD 2016
LK http://uvadoc.uva.es/handle/10324/34958
UL http://uvadoc.uva.es/handle/10324/34958
LA eng
NO Superlattices and Microstructures, 2016, Volume 99, Pages 45-53
NO Producción Científica
DS UVaDOC
RD 22-nov-2024