RT info:eu-repo/semantics/article
T1 Optical and structural characterisation of epitaxial nanoporous GaN grown by CVD
A1 Mena, Josué
A1 Carvajal, Joan Josep
A1 Martínez Sacristán, Óscar
A1 Jiménez López, Juan Ignacio
A1 Zubialevich, V.
A1 Parbrook, Peter
A1 Díaz, Francesc
A1 Aguiló, Magdalena
K1 Materiales porosos
K1 porous materials
K1 Nitruro de galio nanoporoso (GaN)
K1 Nanoporous gallium nitride (GaN) epitaxial layers
AB In this paper we study the optical properties of nanoporous gallium nitride (GaN) epitaxial layers grown by chemical vapour deposition on non-porous GaN substrates, using photoluminescence, cathodoluminescence, and resonant Raman scattering, and correlate them with the structural characteristic of these films. We pay special attention to the analysis of the residual strain of the layers and the influence of the porosity in the light extraction. The nanoporous GaN epitaxial layers are under tensile strain, although the strain is progressively reduced as the deposition time and the thickness of the porous layer increases, becoming nearly strain free for a thickness of 1.7 μm. The analysis of the experimental data point to the existence of vacancy complexes as the main source of the tensile strain.
PB IOP Publishing
SN 0957-4484
YR 2017
FD 2017
LK http://uvadoc.uva.es/handle/10324/35094
UL http://uvadoc.uva.es/handle/10324/35094
LA eng
NO Nanotechnology, 2017, Volume 28, Number 37, 375701
NO Producción Científica
DS UVaDOC
RD 24-nov-2024