RT info:eu-repo/semantics/article
T1 Polarization-Resolved Near-Field Spectroscopy of Localized States in m-Plane InxGa1−xN/GaN Quantum Wells
A1 Ivanov, Ruslan
A1 Martínez Sacristán, Óscar
A1 Kuritzky, Leah Y.
A1 Myers, Daniel J.
A1 Nakamura, Shuji
A1 Speck, James S.
K1 Optoelectronics
K1 Photonics
AB We present a polarization, spectrally, and spatially resolved near-field photoluminescence (PL) measurement technique and apply it to the study of wide m-plane InxGa1−xN/GaN quantum wells grown on on-axis and miscut GaN substrates. It is found that PL originates from localized states; nevertheless, its degree of linear polarization (DLP) is high with little spatial variation. This allows an unambiguous assignment of the localized states to InxGa1−xN composition-related band potential fluctuations. Spatial PL variations, occurring due to morphology features of the on-axis samples, play a secondary role compared to the variations of the alloy composition. The large PL peak wavelength difference for polarizations parallel and perpendicular to the c axis, the weak correlation between the peak PL wavelength and the DLP, and the temperature dependence of the DLP suggest that effective potential variations and the hole mass in the second valence-band level are considerably smaller than that for the first level. DLP maps for the long wavelength PL tails have revealed well-defined regions with a small DLP, which have been attributed to a partial strain relaxation around dislocations.
PB American Physical Society
SN 2331-7019
YR 2017
FD 2017
LK http://uvadoc.uva.es/handle/10324/35203
UL http://uvadoc.uva.es/handle/10324/35203
LA eng
NO Physical Review Applied, 2017, vol. 7, n. 6, 064033
NO Producción Científica
DS UVaDOC
RD 18-nov-2024