RT info:eu-repo/semantics/conferenceObject
T1 Cathodoluminescence characterization of the band gap energy in dilute nitride GaNSbAs alloys [Poster]
A1 Navarro, A.
A1 Martínez Sacristán, Óscar
A1 Galiana, Beatriz
A1 Lombardero, I.
A1 Ochoa, M.
A1 García, I.
A1 Gabás, M.
A1 Ballesteros, Carmen
A1 Jiménez López, Juan Ignacio
A1 Algora, C.
AB The development of a high quality 1eV material is one of the most import challenges in high efficiency solar cells development. The GaInP/GaInAs/1eV/Ge structure attained one of the highest solar cell efficiency, 44.0%. The dilute nitride GaNSbAs has attracted a considerable interest, since this alloy can be grown lattice-matched to GaAs with a bandgap of 1eV. However, It is well-known that N incorporation in dilute nitrides is associated with the generation of structural defects and as a result, the degradation of the optical properties. Thermal annealing is the most common procedure to improve the dilute nitrides response. In order to have a deeper understanding of the GaNSbAs layer behaviour, the effects of ex-situ annealing in N-atmosphere and in-situ annealing in As-atmosphere, have been investigated. Samples have been analysed for the first time by cathodoluminescence (CL), being this technique a good method for getting direct information in a simple, fast and non-destructive way about compositional gradients. It has been supported by scanning transmission electron microscopy (STEM) and energy dispersive spectroscopy (EDS).
YR 2017
FD 2017
LK http://uvadoc.uva.es/handle/10324/35207
UL http://uvadoc.uva.es/handle/10324/35207
LA eng
NO 17th International Conference DRIP: Defects-Recognition, Imaging and Physics in Semiconductors, 8th to the 12th of October 2017, Valladolid, Spain
DS UVaDOC
RD 26-dic-2024