RT info:eu-repo/semantics/bookPart
T1 Capacitance Spectroscopy for MOS Systems
A1 Dueñas Carazo, Salvador
A1 Castán Lanaspa, María Helena
K1 Semiconductores de óxido metálico
AB Capacitance studies of metal–oxide–semiconductor (MOS) capacitors have been used since the early 60s of the past century to investigates the interface surface states, oxide charge and electron and ion phenomena in these structures. This chapter provides detailed information about the theoretical basis, and examples of application of capacitance spectroscopy techniques in a variety of MOS systems.
PB Jenny Stanford Publishing
SN 9781315150130
YR 2018
FD 2018
LK http://uvadoc.uva.es/handle/10324/44637
UL http://uvadoc.uva.es/handle/10324/44637
LA eng
NO Dueñas, Salvador; Castán, Helena. Capacitance Spectroscopy for MOS Systems. Capacitance Spectroscopy of Semiconductors, edited by Jian V. Li, Giorgio Ferrari. 1st Edition, 2018, Jenny Stanford Publishing. https://doi.org/10.1201/b22451
NO Producción Científica
DS UVaDOC
RD 22-dic-2024