RT info:eu-repo/semantics/article
T1 Atomic layer deposition and properties of ZrO2/Fe2O3 thin films
A1 Kalam, Kristjan
A1 Seemen, Helina
A1 Ritslaid, Peeter
A1 Rähn, Mihkel
A1 Tamm, Aile
A1 Kukli, Kaupo
A1 Kasikov, Aarne
A1 Link, Joosep
A1 Stern, Raivo
A1 Dueñas Carazo, Salvador
A1 Castán Lanaspa, María Helena
A1 García García, Héctor
K1 Atomic layer deposition
K1 Deposición de capa atómica
K1 Metal oxides
K1 Óxidos metálicos
K1 Thin films
K1 Láminas delgadas
AB Thin solid films consisting of ZrO2 and Fe2O3 were grown by atomic layer deposition (ALD) at 400 °C. Metastable phases of ZrO2were stabilized by Fe2O3 doping. The number of alternating ZrO2 and Fe2O3 deposition cycles were varied in order to achievefilms with different cation ratios. The influence of annealing on the composition and structure of the thin films was investigated.Additionally, the influence of composition and structure on electrical and magnetic properties was studied. Several samples exhibited a measurable saturation magnetization and most of the samples exhibited a charge polarization. Both phenomena were observed in the sample with a Zr/Fe atomic ratio of 2.0.
PB Beilstein-Institut
SN 2190-4286
YR 2018
FD 2018
LK http://uvadoc.uva.es/handle/10324/44647
UL http://uvadoc.uva.es/handle/10324/44647
LA eng
NO Beilstein Journal of Nanotechnology, 2018, vol. 9. p. 119-128
NO Producción Científica
DS UVaDOC
RD 22-dic-2024