RT info:eu-repo/semantics/article
T1 Analysis and control of the intermediate memory states of RRAM devices by means of admittance parameters
A1 Castán Lanaspa, María Helena
A1 Dueñas Carazo, Salvador
A1 García García, Héctor
A1 González Ossorio, Óscar
A1 Domínguez, Leidy Azucena
A1 Sahelices Fernández, Benjamín
A1 Miranda, E.
A1 Bargalló González, Mireia
A1 Campabadal Segura, Francesca
K1 Metal oxides
K1 Óxidos metálicos
K1 Dielectric properties
K1 Propiedades dieléctricas
K1 Thin films
K1 Láminas delgadas
AB A thorough study of the admittance of TiN/Ti/HfO2/W bipolar resistive memories [resistancerandom access memory (RRAM)] was carried out under different bias conditions and in a widerange of ac signal frequencies. We demonstrate that a continuum of intermediate states can beobtained by applying appropriate dc bias waveforms. Cumulative writing and erasing admittancecycles were performed by applying triangular voltage waveform of increasing amplitude. The influence of the initial conditions on the variation of the real (conductance) and imaginary (susceptance)components of the admittance is described. An accurate control of the memory state is achievedboth in terms of the conductance and the susceptance by means of an adequate selection of thevoltage values previously applied. A method to obtain three-dimensional voltage-conductance-susceptance state-plots is described in detail. Memory maps of admittance parameters as a function ofthe programming voltage are made by sensing the memory state at 0 V, without static power consumption. The multilevel nature of RRAM devices and their suitability for neuromorphic computation are demonstrated.
PB AIP Publishing
SN 1089-7550
YR 2018
FD 2018
LK http://uvadoc.uva.es/handle/10324/44651
UL http://uvadoc.uva.es/handle/10324/44651
LA eng
NO Journal of Applied Physics, 2018, vol. 124, n. 15. 9 p.
NO Producción Científica
DS UVaDOC
RD 12-sep-2024